FQA13N50C

QA13N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchildís proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
Low gate charge ( typical 43 nC)
Low Crss ( typical 20pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

@@__SCHEDA_TECNICA__@@

Download...